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	SFH305
	Siemens Semiconductor Group
	Mini-Silicon Phototransistor
	213.627 千字节
	4 页
	Maker Site: http://www.automation.siemens.com/semiconductor/in
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SFH305 DataSheet Siemens Semiconductor Group Mini-Silicon NPN Phototransistor

---Full Text Search Engine--- SFH305 Siemens Semiconductor Group
---Full Text Search Engine--- Mini-Silicon Phototransistor

SFH305-2 SFH305-3 SFH305 Q62702-P836 Q62702-P848 Q62702-P849
SFH305

SFH320	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320-3	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320-4	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320F	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320F-3	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320F-4	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320FA	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320FA-3	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH320FA-4	[Siemens Semiconductor Group] NPN-Silizium-Fototransistor im SMT TOPLEDa-Gehause Silicon NPN Phototransistor in SMT TOPLEDa-Package
SFH313FA	[Infineon] New: Silicon NPN Phototransistor
SFH313	[Infineon] Neu: NPN-Silizium-Fototransistor
SFH3201	[Infineon] NPN-Silizium-Fototransistor im SMT-Gehuse Silicon NPN Phototransistor in SMT Package
SFH3500FA	[Infineon] NPN Silizium Fototransistor Silicon NPN Phototransistor
SFH3500	[Infineon] NPN Silizium Fototransistor Silicon NPN Phototransistor
SFH3401	[Infineon] NPN-Silizium-Fototransistor Silicon NPN Phototransistor
SFH3505FA	[Infineon] NPN Silizium Fototransistor Silicon NPN Phototransistor
SFH3505	[Infineon] NPN Silizium Fototransistor Silicon NPN Phototransistor
SFH3100F	[Infineon] NPN-Silizium-Fototransistor mit Tageslichtsperrfilter

SFH 305
Mini-NPN-Silizium-Fototransistor Mini-Silicon NPN Phototransistor
SFH 305
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
Wesentliche Merkmale
q Speziell geeignet fur Anwendungen im
Features
q Especially suitable for applications from
Bereich von 460 nm bis 1060 nm q Hohe Linearitat q Mini-Bauform q Gruppiert lieferbar Anwendungen
q Miniaturlichtschranken fur Gleich- und
460 nm to 1060 nm q High linearity q Mini-package q Available in groups Applications
q q q q
Wechsellichtbetrieb q Lochstreifenleser q Industrieelektronik q "Messen/Steuern/Regeln"
Miniature photointerrupters Punched tape reading Industrial electronics For control and drive circuits
Typ Type SFH 305 SFH 305-2 SFH 305-3
Bestellnummer Ordering Code Q62702-P836 Q62702-P848 Q62702-P849
Semiconductor Group
262
10.95
feo06137
SFH 305
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur bei Tauchlotung Lotstelle  2 mm vom Gehause, Lotzeit t  5 s Dip soldering temperature  2 mm distance from case bottom, soldering time t  5 s Lottemperatur bei Kolbenlotung Lotstelle  2 mm vom Gehause, Lotzeit t  3 s Iron soldering temperature  2 mm distance from case bottom, soldering time t  3 s Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom,  < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Warmewiderstand Thermal resistance Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C
Top; Tstg TS
TS
300
C
VCE IC ICS Ptot RthJA
32 50 200 70 950
V mA mA mW K/W
Kennwerte (TA = 25 C,  = 950 nm) Characteristics Bezeichnung Description Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Symbol Symbol S max  Wert Value 850 460 ... 1060 Einheit Unit nm nm
A
0.17
mm2
Semiconductor Group
263
SFH 305
Kennwerte (TA = 25 C,  = 950 nm) Characteristics (cont'd) Bezeichnung Description Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Symbol Symbol Wert Value 0.6 x 0.6 1.3 ... 1.9 Einheit Unit mm x mm mm
LxB LxW H

16 5.5
Grad deg. pF
CCE
ICEO
3 ( 20)
nA
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Description Fotostrom,  = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCE = 5 V Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3, Ee = 0.5 mW/cm2
1) 1)
Symbol Symbol -2
Wert Value -3
Einheit Unit
IPCE IPCE t r, t f
0.25 ... 0.5 1.4 5.5
0.4 ... 0.8 2.2 6
mA mA s
VCEsat
150
150
mV
IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group
Semiconductor Group
264
SFH 305
Relative spectral sensitivity Srel = f ()
Photocurrent IPCE = f (Ee), VCE = 5 V
Total power dissipation Ptot = f (TA)
Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V
Collector-emitter capacitance CCE = f (VCE), f = 1 MHz, E = 0
Dark current ICEO = f (TA), VCE = 25 V, E = 0
Directional characteristics Srel = f ()
Semiconductor Group
265